Role OverviewThe MBE Engineer manufactures InP-laser structures with MBE system, records and tracks the data of InP-laser wafer growth. Responsible for routine maintenance and calibration of equipment, wafer growth and characterization, monitoring and interpreting characterization results to the multi-disciplinary team of device fabrication, manufacturing of structures, and ensure quality to control yields and performance.
What You Will Do
Independently and professionally operate MBE growth and characterization of InP-based materials. Take system ownership and be responsible for production and system service. Measure epitaxial wafers by using structural, optical, and electrical characterization tools.
Why It Might Be a Fit
To be considered for MBE Engineer position, a minimum 3-year experience in experiment design, process control, and improvement in semiconductor laboratory or fabrication is required. Hands-on experience in semiconductor characterization techniques, such as photoluminescence, X-ray diffraction, optical microscopy, etc. is preferred.
Requirements
- Bachelor’s degree in Chemical, Electrical Engineering, Material Science, Physics, or related discipline
- Minimum 3-year experience in experiment design, process control, and improvement in semiconductor laboratory or fabrication
- Hands-on experience in semiconductor characterization techniques, such as photoluminescence, X-ray diffraction, optical microscopy, etc.
- Knowledge of compound semiconductor device theory
- Experience operating MBE or MOCVD epitaxy growth systems
Benefits
- Competitive salary
- Flexible and competitive health (medical, dental, vision) plans
- Employer matching on 401(k) deferrals
- Generous PTO policy, with unused PTO payout at end of the year
- Relocation package available within US
- Immigration sponsorships (Must be currently authorized to work in the US)
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