Role OverviewAn exciting opportunity exists at Raytheon for a Principal Semiconductor Process Development Engineer to join our III-V process development team working on gallium nitride-based devices and III-V focal plane array fabrication within the Microelectronics / Module Design & Foundry Services (RFMicro) Department.
What You Will Do
Processing wafers to create FETs, MMICs, and FPAs in a cleanroom environment. Expected to work well in small, cross-functional teams, assist in pursuing contract R&D, and assist in transitioning processes into production.
Why It Might Be a Fit
The chosen candidate is expected to be an innovative and creative thinker capable of probing issues and reaching solutions both independently and in a team environment.
Requirements
- Typically requires a Bachelor’s in Science, Technology, Engineering, or Mathematics (STEM).
- A minimum of 8 years of prior work experience semiconductor processing techniques such as: photolithography, dry etching, metals evaporation, and optical or scanning electron microscope inspections OR a Master’s in STEM and 5 years of prior work experience OR a PhD in STEM and 3 years of prior work experience.
- The ability to obtain and maintain a U.S. government issued security clearance is required. U.S. citizenship is required, as only U.S. citizens are eligible for a security clearance.
Benefits
- medical
- dental
- vision
- life insurance
- short-term disability
- long-term disability
- 401(k) match
- flexible spending accounts
- flexible work schedules
- employee assistance program
- Employee Scholar Program
- parental leave
- paid time off
- holidays
- annual short-term and/or long-term incentive compensation programs
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